********************************************************** * * MJD32C * * Nexperia * * High power/low VCEsat PNP transistor * IC = 3 A * VCEO = 100 V * hFE = min. 25 @ 4V/1A * * * * * Package pinning does not match Spice model pinning. * Package: SOT 428 * * Package Pin 1/: Base * Package Pin 2/mb: Collector * Package Pin 3: Emitter * * * Extraction date (week/year): 12/2019 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: Diode D1, Transistor Q2 and Resistor RQ * are dedicated to improve modeling of quasi * saturation area and reverse mode operation * and do not reflect physical devices * .SUBCKT MJD32C 1 2 3 Q1 1 2 3 Transistor 0.7051 Q2 11 2 3 Transistor 0.2949 RQ 11 1 4.699 D1 1 2 Diode * .MODEL Transistor PNP + IS = 9.733E-13 + NF = 1.029 + ISE = 7.164E-14 + NE = 1.346 + BF = 350 + IKF = 0.369 + VAF = 31.28 + NR = 1.029 + ISC = 9.462E-13 + NC = 1.309 + BR = 44.32 + IKR = 0.5748 + VAR = 13.27 + RB = 150 + IRB = 5E-05 + RBM = 4 + RE = 0.0281 + RC = 0.01964 + XTB = 1.652 + EG = 1.11 + XTI = 2.061 + CJE = 3.446E-10 + VJE = 0.7927 + MJE = 0.3784 + TF = 1.159E-09 + XTF = 2.788 + VTF = 2.025 + ITF = 0.8316 + PTF = 0 + CJC = 7.656E-11 + VJC = 0.4582 + MJC = 0.3876 + XCJC = 1 + TR = 7E-08 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.3809 .MODEL Diode D + IS = 1.459E-14 + N = 0.8934 + BV = 1000 + IBV = 0.001 + RS = 629.5 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *