********************************************************** * * MJD45H11A * * Nexperia * * High power / low VCEsat PNP transistor * IC = 8 A * VCEO = 80 V * hFE = min. 60 @ 1V/2A * * * * * Package pinning does not match Spice model pinning. * Package: SOT 428 * * Package Pin 1: Base * Package Pin 2/mb: Collector * Package Pin 3: Emitter * * * Extraction date (week/year): 12/2019 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: Diode D1, Transistor Q2 and Resistor RQ * are dedicated to improve modeling of quasi * saturation area and reverse mode operation * and do not reflect physical devices * .SUBCKT MJD45H11A 1 2 3 Q1 1 2 3 Transistor 0.7828 Q2 11 2 3 Transistor 0.2172 RQ 11 1 1.954 D1 1 2 Diode * .MODEL Transistor PNP + IS = 2.489E-12 + NF = 1.018 + ISE = 2.449E-14 + NE = 1.369 + BF = 265 + IKF = 6.174 + VAF = 44.54 + NR = 1.018 + ISC = 1.932E-16 + NC = 0.9755 + BR = 110.5 + IKR = 1.302 + VAR = 37.29 + RB = 20 + IRB = 3.5E-05 + RBM = 2.6 + RE = 0.01128 + RC = 0.009346 + XTB = 1.695 + EG = 1.11 + XTI = 1.795 + CJE = 1.265E-09 + VJE = 0.768 + MJE = 0.3809 + TF = 1.38E-09 + XTF = 21.22 + VTF = 4.139 + ITF = 1.38 + PTF = 0 + CJC = 2.768E-10 + VJC = 0.4371 + MJC = 0.3741 + XCJC = 1 + TR = 4E-08 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.75 .MODEL Diode D + IS = 6.855E-14 + N = 1.046 + BV = 1000 + IBV = 0.001 + RS = 228.5 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS *