********************************************************** * * PBHV3160Z * * Nexperia * * High voltage (BISS) PNP Transistor * IC = 0,1 A * VCEO = 600 V * hFE = typ. 130@ 10V/10mA * * * * * Package pinning does not match Spice model pinning. * Package: SOT 223 * * Package Pin 1: Base * Package Pin 2: Collector * Package Pin 3: Emitter * Package Pin 4: Collector * * Extraction date (week/year): 40/2022 * Spicemodel includes temperature dependency * ********************************************************** *# * Please note: Diode D1, Transistor Q2 and Resistor RQ * are dedicated to improve modeling of quasi * saturation area and reverse mode operation * and do not reflect physical devices. * .SUBCKT PBHV3160Z 1 2 3 Q1 1 2 3 MAIN 0.7658 Q2 11 2 3 MAIN 0.2342 RQ 1 11 663.7 D1 1 2 DIODE * .MODEL MAIN PNP + IS = 2.966E-14 + NF = 1.002 + ISE = 1.156E-14 + NE = 1.405 + BF = 122 + IKF = 0.004457 + VAF = 47.64 + NR = 1.029 + ISC = 5.582E-15 + NC = 1.183 + BR = 1.461 + IKR = 0.1805 + VAR = 234.4 + RB = 38 + IRB = 5E-05 + RBM = 3.66 + RE = 0.001982 + RC = 0.2657 + XTB = 3.954 + EG = 1.11 + XTI = 17.43 + CJE = 8.711E-11 + VJE = 0.7237 + MJE = 0.3646 + TF = 1.329E-09 + XTF = 28.69 + VTF = 8.896 + ITF = 0.09128 + PTF = 0 + CJC = 3.09E-11 + VJC = 0.4 + MJC = 0.3083 + XCJC = 1 + TR = 1.5E-05 + CJS = 0 + VJS = 0.75 + MJS = 0.333 + FC = 0.7663 .MODEL DIODE D + IS = 1.196E-12 + N = 0.9981 + BV = 1000 + IBV = 0.001 + RS = 329.9 + CJO = 0 + VJ = 1 + M = 0.9 + FC = 0 + TT = 0 + EG = 1.1 + XTI = 3 .ENDS *