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*
* PBSS5560PA
*
* Nexperia
*
* Low VCEsat PNP (BISS) Transistor
* IC   = 5 A
* VCEO = 60 V 
* hFE  = typ.230  @ 2V/2A
*
*
*
*
* Package pinning does not match Spice model pinning.
* Package: SOT 1061
* 
* Package Pin 1: Base 
* Package Pin 2: Emitter
* Package Pin 3: Collector
*
*
* Extraction date (week/year): 20/2009
* Spicemodel does not include temperature dependency
*
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*#          
* Please note: Diode D1/D2, Transistor Q2 and Resistor RQ 
* are dedicated to improve modeling of quasi
* saturation area and reverse mode operation
* and do not reflect physical devices.
* 
.SUBCKT PBSS5560PA 1 2 3
Q1 1 2 3 PBSS5560PA 0.7076
Q2 11 2 3 PBSS5560PA 0.2924 
D1 1 2 DIODE 
D2 11 2 DIODE 
RQ 1 11 0.912 
*
.MODEL PBSS5560PA PNP 
+ IS = 1.658E-012 
+ NF = 0.9694 
+ ISE = 9.8E-014 
+ NE = 1.383 
+ BF = 320 
+ IKF = 5 
+ VAF = 30 
+ NR = 0.97 
+ ISC = 1.912E-013 
+ NC = 1.113 
+ BR = 98.64 
+ IKR = 1.059 
+ VAR = 15 
+ RB = 7 
+ IRB = 0.001 
+ RBM = 1.5 
+ RE = 0.02693 
+ RC = 0.01136 
+ XTB = 0 
+ EG = 1.11 
+ XTI = 3 
+ CJE = 6.583E-010 
+ VJE = 0.7459 
+ MJE = 0.3843 
+ TF = 1.85E-009 
+ XTF = 6 
+ VTF = 1.7 
+ ITF = 1.2 
+ PTF = 0 
+ CJC = 2.084E-010 
+ VJC = 0.8187 
+ MJC = 0.4608 
+ XCJC = 1 
+ TR = 6E-010 
+ CJS = 0 
+ VJS = 0.75 
+ MJS = 0.333 
+ FC = 0.9 
.MODEL DIODE D 
+ IS = 1.095E-015 
+ N = 0.8864 
+ BV = 1000 
+ IBV = 0.001 
+ RS = 2360 
+ CJO = 0 
+ VJ = 1 
+ M = 0.9 
+ FC = 0 
+ TT = 0 
+ EG = 1.1 
+ XTI = 3 
.ENDS
*